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[박영우교수] 플래시메모리 1천배 속도의 메모리 소자 개발
A fast and low-power microelectromechanical system-based non-volatile memory device
본 학부 박영우교수팀과 건국대 이상욱교수팀은 플래시 메모리보다 저장, 삭제 등의 처리속도가 기존 보다 1000배 이상 빠른 차세대 메모리 소자를 최초로 개발했다.

이번 연구결과는 네이처 커뮤니케이션지에서 확인가능하다.
"Several new generation memory devices have been developed to overcome the low performance of conventional silicon-based flash memory. In this study, we demonstrate a novel non-volatile memory design based on the electromechanical motion of a cantilever to provide fast charging and discharging of a floating-gate electrode. The operation is demonstrated by using an electromechanical metal cantilever to charge a floating gate that controls the charge transport through a carbon nanotube field-effect transistor. The set and reset currents are unchanged after more than 11 h constant operation. Over 500 repeated programming and erasing cycles were demonstrated under atmospheric conditions at room temperature without degradation. Multinary bit programming can be achieved by varying the voltage on the cantilever. The operation speed of the device is faster than a conventional flash memory and the power consumption is lower than other memory devices."


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